Charles W. Tu


Office: 4408 Engineering Building Unit 1

Chair’s Office: 2809 EBU-1

Mailing Address:
Department of Electrical and Computer Engineering
9500 Gilman Drive, Mail Code 0407
University of California, San Diego
La Jolla, CA 92093-0407

Email: ctu@ece.ucsd.edu
Phone: (858) 534-4687
Fax: (858) 822-3427

Ph.D. Yale University, 1978

Electronic Materials

Charles Tu was a Lecturer in the Yale Physics department from 1978-1980. From 1980-1988, he was a member of the technical staff at AT&T Bell Laboratories, Murray Hill, N.J. In 1988 he joined the faculty of UC San Diego.

Current Research

Gas-source molecular beam epitaxy (MBE) of III-V compound semiconductors heterostructures for electronic and optoelectronic applications. He set up two of the first three or four gas-source MBE systems in U.S. universities. With these systems, his group is able to advance the capability of MBE into arsenide/phosphide/nitride-based heterostructures and selective-area regrowth on patterned-and-etched substrates to improve device performance.  Currently his research focus is on a new class of semiconductors, dilute nitrides, for optoelectronic applications.


Honors and Distinctions

·       Associate Dean, Jacobs School of Engineering (2004-present)

·       Chairman, ECE Department (1999-2003)

·       Fellow of the AVS Science and Technology Society (2004)

·       Fellow of the American Physical Society (2002)

·       Fellow of the IEEE (2002)

·       Ranked no. 613 Most Cited Physicist (among 500,000 authors) between 1981 and June 1997 by the Institute of Scientific Information (1997)

·       Japan Society for Promotion of Sciences Fellowship (1997)

·       Adjunct Professor, Department of Materials Science and Engineering, National Gwangju Institute of Science and Technology, Gwangju, Korea (1995-present)

·       Visiting Professor, Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, Japan (Winter 2005)

·       NSF-Japan Center for Global Partnership Fellowship (1993-1995)

·       United Nations Development Program Award for a lecture tour in China (1991)

·       Distinguished Member of Technical Staff, AT&T Bell Labs (1987)

·       Exceptional Contribution Award, AT&T Bell Labs (1985, 1986, 1987)

·       Horace Watson Gold Medal in Physics, McGill University (1971)

Selected Publications

·       More than 300 journal papers and more than 100 conference proceeding papers.

·       Y.G. Hong, A. Nishikawa, and C.W. Tu, “Effect of nitrogen on the optical and transport properties of Ga0.48In0.52NyP1-y grown on GaAs(001) substrates”, APPLIED PHYSICS LETTERS, 83(26):5446-5448, Dec 29, 2003.

·       R.J. Welty, H.P. Xin, K. Mochizuki, C.W. Tu, and P.M. Asbeck, “GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage”, SOLID-STATE ELECTRONICS, V46(N1):1-5, Jan 2002.

·       C.W. Tu, “III-N-V low-bandgap nitrides and their device applications”,
JOURNAL OF PHYSICS-CONDENSED MATTER, V13(N32):7169-7182, Aug 13, 2001.

·       Y.G. Hong, R. Andre, and C.W. Tu, “Gas-source molecular beam epitaxy of GaInNP/GaAs and a study of its band lineup”, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, V19(N4):1413-1416, Jul-Aug, 2001.

·       H.P. Xin, R.J. Welty, and C.W. Tu, “GaN0.011P0.989-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates”, IEEE PHOTONICS TECHNOLOGY LETTERS, V12(N8):960-962, Aug 2000.

·       H.P. Xin, C.W. Tu, Y. Zhang, and A. Mascarenhas, “Effects of nitrogen on the band structure of GaNxP1-x alloys”, APPLIED PHYSICS LETTERS, V76(N10):1267-1269, Mar 6, 2000.

Last Updated: 12/21/04