Peter M. Asbeck



Office: 3607 Engineering Building Unit 1

Mailing Address:
Department of Electrical and Computer Engineering
9500 Gilman Drive, Mail Code 0407
University of California, San Diego
La Jolla, CA 92093-0407

Email: asbeck@ece.ucsd.edu
Phone: (858) 534-6713
Fax: (858) 534-2486


Ph.D. Massachusetts Institute of Technology, 1975

Electronic Devices and Material
He has worked at the Sarnoff Research Center, Princeton, N.J., and at the Philips Laboratory, Briarcliff Manor, N.Y., in quantum electronics and GaAlAs/GaAs laser physics and applications. In 1978 he joined Rockwell International Science Center and worked on the development of high-speed devices and circuits based on III-V compounds and heterojunctions. He carried out pioneering work in the area of heterojunction bipolar transistors (HBTs). In 1991, he became a Professor of electrical engineering here.

Research Interests

Development of high-speed heterojunction transistors and optoelectronic devices

Current Research

Advanced transistors in III-V materials and in Si, and applying them in microwave and high speed digital circuits.



Honors and Distinctions
  • General Chairman, 1996 Device Research Conference
  • Engineer of the Year, Rockwell International, 1986

    Selected Publications

    P.M. Asbeck, "Development of HBT Structure to Minimize Parasitic Elements," Solid-State Electronics, 38(9), 1691 (1995).

    P.R. de la Houssaye, C.E. Chang, B. Offord, G. Imthurn, R. Johnson, P.M. Asbeck, G.A. Garcia, and I. Lagnado, "Microwave Performance of Optically Fabriacted T-Gate Thin Film Silicon-on-Sapphire Based MOSFETS's," IEEE Electron. Dev. Letts., 16(6), 289 (1995).

    M.C. Ho, R.A. Johnson, W.J. Ho, M.F. Chang, and P.M. Asbeck, "High Performance Low Base-Collector Capacitance AlGaAs/GaAs Heterojunction Bipolar Transistors Fabricated by Deep Ion Implantation," IEEE Electron.Dev.Letts., 16(11), 512 (1195). Last Updated: 5/2/97